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n-kanal
An MOS process in which MOS transistors are formed by bridging two adjacent N-type diffusions (source and drain) with a dielectric (gate). When the source and the substrate are grounded and a positive voltage is applied to the gate, a conductive sheet of negative charge (N-channel) is created in the surface of the substrate under the dielectric.
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- 词性: 名词
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- 行业/领域: 半导体
- 类别 半导体质量
- Company: National Semiconductor
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